Improving the Precision of On-Wafer W-Band Scalar Load-Pull Measurements

This article presents an empirical investigation of calibration effects on load-pull measurements collected wafer and at W-band frequencies. An analysis scattering parameter (S-parameter) provides insight into how small-signal metrics germane to load pull are affected by choice the technique. It is found that off-wafer line-reflect-reflect-match (LRRM) calibrated same transistor with different probes exhibit drastically maximum gains compared equivalent on-wafer multiline thru-reflect-line (mTRL) measurements. Load-pull heavily influenced algorithm, LRRM large-signal waveguide yield variations in gain over 2 dB peak PAE 24 percentage points. The mTRL consistent within 0.1 for 1 point PAE. work quantitative evidence well-designed structures preferred millimeter-wave If utilization not possible, this suggests using similar measurement setups, i.e., probes, standards, etc., evaluating unmatched transistors a manner.